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| NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 Features * * * * Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified http://onsemi.com Typical Applications -6.0 AMPERES -20 VOLTS RDS(on) = 44 mW (Typ.) P-Channel D * Power Management in Portables and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (Note 1) - Continuous @ TA = 25C - Continuous @ TA = 70C - Single Pulse (tp = 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -20 Vdc, VGS = -5.0 Vdc, IL(pk) = -10 A, L = 3.0 mH, RG = 25W) Thermal Resistance - Junction to Lead (Note 1) - Junction to Ambient (Note 2) - Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg EAS Value -20 8.0 -10 -8.4 -35 8.3 -55 to +150 150 Unit Vdc Vdc Adc Apk W C mJ 1 2 3 4 G S MARKING DIAGRAM SOT-223 CASE 318E STYLE 3 AWW 6P02 C/W RJL RJA RJA TL 15 71.4 160 260 C A WW 6P02 = Assembly Location = Work Week = Device Code PIN ASSIGNMENT 4 Drain 1. Steady State. 2. When surface mounted to an FR4 board using 1 pad size, (Cu. Area 1.127 in2), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 in2), Steady State. 1 2 3 Gate Drain Source ORDERING INFORMATION Device NTF6P02T3 Package SOT-223 Shipping 4000/Tape & Reel (c) Semiconductor Components Industries, LLC, 2002 1 September, 2002 - Rev. 0 Publication Order Number: NTF6P02T3/D NTF6P02T3 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = -20 Vdc, VGS = 0 Vdc) (VDS = -20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) V(BR)DSS -20 - IDSS - - IGSS - - - - -1.0 -10 100 nAdc -25 -11 - - Vdc mV/C mAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = -250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = -4.5 Vdc, ID = -6.0 Adc) (VGS = -2.5 Vdc, ID = -4.0 Adc) (VGS = -2.5 Vdc, ID = -3.0 Adc) Forward Transconductance (Note 4) (VDS = -10 Vdc, ID = -6.0 Adc) VGS(th) -0.4 - RDS(on) - - - gfs - 44 57 57 12 50 70 - - Mhos -0.7 2.6 -1.0 - Vdc mV/C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance (VDS = -10 Vdc, VGS = 0 V, f = 1 0 MH ) 1.0 MHz) (VDS = -16 Vdc, VGS = 0 V, f = 1 0 MH ) 1.0 MHz) Ciss Coss Crss Ciss Coss Crss - - - - - - 900 350 90 940 410 110 1200 500 150 - - - pF pF SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = -16 Vdc, ID = -6.0 Adc, VGS = -4.5 Vdc) (Note 4) 4 5 Vd ) (N t (VDD = -16 Vdc, ID = -6.0 Adc, VGS = -4.5 Vdc, 4 5 Vd RG = 2.5 W) (VDD = -5.0 Vdc, ID = -1.0 Adc, VGS = -4.5 Vdc, 4 5 Vd RG = 6.0 W) td(on) tr td(off) tf td(on) tr td(off) tf QT Qgs Qgd - - - - - - - - - - - 7.0 25 75 50 8.0 30 60 60 15 1.7 6.0 12 45 125 85 - - - - 20 - - nC ns ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = -3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = -2.1 Adc, VGS = 0 Vdc) (IS = -3.0 Adc, VGS = 0 Vdc, TJ = 125C) (IS = -3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ ) (Note 4) A/ms) (N t VSD - - - - - - - -0.82 -0.74 -0.68 42 17 25 0.036 -1.2 - - - - - - mC Vdc Reverse Recovery Time trr ta tb ns Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 5. Switching characteristics are independent of operating junction temperatures. QRR http://onsemi.com 2 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS 12 -10 V -7.0 V -5.0 V 9 12 -ID, DRAIN CURRENT (AMPS) VDS -10 V 10 8 6 4 TJ = -55C 2 TJ = 25C 0 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 100C -2.2 V -2.0 V -2.4 V -3.2 V -4.4 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -1.8 V 6 -1.6 V 3 -1.4 V VGS = -1.2 V 0 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 0.08 Figure 2. Transfer Characteristics TJ = 25C 0.07 VGS = -2.5 V 0.06 0.05 VGS = -4.5 V 0.04 0.03 0.02 2 4 6 8 10 12 14 -ID, DRAIN CURRENT (AMPS) 0.15 ID = -6.0 A TJ = 25C 0.1 0.05 0 0 1 2 3 4 5 6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = -6.0 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 1.4 10,000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.2 1000 1.0 0.8 TJ = 100C 0.6 -50 100 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS VDS = 0 V VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 TJ = 25C QT -VDS -VGS 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) 3000 5 20 4 1800 Crss 1200 Ciss Coss Crss 0 10 5 -VGS 0 -VDS 5 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3 Qgs 2 Qgd 12 8 ID = -6.0 A TJ = 25C 600 1 0 0 4 8 4 0 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 -IS, SOURCE CURRENT (AMPS) VDD = -16 V ID = -3.0 A VGS = -4.5 V td(off) t, TIME (ns) 100 tf tr 10 td(on) 7 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (W) 100 0.3 0.6 1.2 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25C 1 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS 1 RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) 1.0E+01 1.0E+02 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.0175 W CHIP JUNCTION 0.0154 F 0.0710 W 0.0854 F 0.2706 W 0.5779 W 0.7086 W 0.3074 F 1.7891 F 107.55 F AMBIENT 1.0E+03 Figure 11. FET Thermal Response INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.091 2.3 0.248 6.3 0.059 1.5 inches mm http://onsemi.com 5 NTF6P02T3 TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 1 PREHEAT ZONE 1 "RAMP" 200C STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP" STEP 4 HEATING ZONES 3 & 6 "SOAK" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C 160C STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205 TO 219C "SPIKE" PEAK AT 170C SOLDER JOINT 150C 100C 100C DESIRED CURVE FOR LOW MASS ASSEMBLIES 5C 140C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 12. Typical Solder Heating Profile http://onsemi.com 6 NTF6P02T3 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S 1 2 3 B D L G J C 0.08 (0003) H M K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 http://onsemi.com 7 NTF6P02T3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTF6P02T3/D |
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